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机译:自对准纳米压印光刻结构的OTFT中的沟道长度变化
JOANNEUM RESEARCH Forschungsgesellschaft mbH, Franz-Pichler-Strasse 30, A-8160 Weiz, Austria;
JOANNEUM RESEARCH Forschungsgesellschaft mbH, Franz-Pichler-Strasse 30, A-8160 Weiz, Austria;
Centre for Electron Microscopy Graz and Institute for Electron Microscopy and Nanoanalysis, Steyrergasse 17, A-8010 Graz, Austria;
Centre for Electron Microscopy Graz and Institute for Electron Microscopy and Nanoanalysis, Steyrergasse 17, A-8010 Graz, Austria;
JOANNEUM RESEARCH Forschungsgesellschaft mbH, Franz-Pichler-Strasse 30, A-8160 Weiz, Austria;
JOANNEUM RESEARCH Forschungsgesellschaft mbH, Franz-Pichler-Strasse 30, A-8160 Weiz, Austria;
JOANNEUM RESEARCH Forschungsgesellschaft mbH, Franz-Pichler-Strasse 30, A-8160 Weiz, Austria;
NIL; Channel length variation; Self-alignment; Organic thin-film transistor;
机译:纳米压印光刻技术制备120nm沟道长度铁电栅薄膜晶体管
机译:通过纳米压印光刻技术和剥离型组合抗蚀剂叠层将金属纳米结构整合到流体通道中,以增强荧光和拉曼光谱
机译:通过纳米压印光刻技术制造的在大范围应用中具有可见频率磁共振的亚波长光栅结构
机译:卷到卷纳米压印光刻技术制备具有亚波长结构的抗反射聚合物薄膜
机译:通过纳米压印光刻技术进行的纳米结构工程,用于纳米光子器件。
机译:金属纳米结构在流体通道中的整合荧光和拉曼增强纳米压印光刻和剥离组成抗蚀剂堆积
机译:金属纳米结构在流体通道中的整合荧光和拉曼增强纳米压印光刻和剥离组成抗蚀剂堆积