Inkjet printed polymeric electron blocking and surface energy modifying layer for low dark current organic photodetectors

摘要

The reduction of dark current is required to enhance the signal-to-noise ratio and decrease the power consumption in photodetectors. This is typically achieved by introducing additional functional layers to suppress carrier injection, a task that proves to be challenging especially in printed devices. Here we report on the successful reduction of dark current below 100 nA cm~(-2) (at -1 V bias) in an inkjet printed photodetector by the insertion of an electron blocking layer based on poly[3-(3,5-di-tert-butyl-4-methoxyphenyl)-thiophene], while preserving a high quantum yield. Furthermore, the electron blocking layer strongly increases the surface energy of the hydrophobic photoactive layer, therefore simplifying the printing of transparent top electrodes from water based formulations without the addition of surfactants.