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首页> 外文期刊>Organic Electronics >Reduction of dark current density in organic ultraviolet photodetector by utilizing an electron blocking layer of TAPC doped with MoO_3
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Reduction of dark current density in organic ultraviolet photodetector by utilizing an electron blocking layer of TAPC doped with MoO_3

机译:利用掺杂了MoO_3的TAPC电子阻挡层降低有机紫外光电探测器中的暗电流密度

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摘要

The work function at the surface of 4,4'Cyclohexylidenebis[N,N-bis(4-methylphenyl) benzenamine (TAPC) layer could be increased by doping MoO3 having high ionization energy. Therefore, in this work, we attempted to dope MoO3 into electron-blocking layer material of TAPC to improve the device performance of organic photodetector (OPD), which effectively suppressed dark current density and increased external quantum efficiency (EQE). When a 5% MoO3 dopant was used, the optimal OPD under reverse-biased of 3 V showed a dark current density of 1.11 nA/cm(2), the EQE of 41.8% under a wavelength of 360 nm, and the detectivity of the specific wavelength surpassed 10(12) Jones. In this study, we found that the decrease in the dark current density was responsible to the lower energy level of lowest unoccupied molecular orbital of TAPC and slower electron transporting capacity, which enabled the effective suppression of leakage current in OPD under bias. Furthermore, the device's EQE was substantially increased for an optimized concentration of MoO3 doped into TAPC.
机译:可以通过掺杂具有高电离能的MoO3来提高4,4'环己叉基双[N,N-双(4-甲基苯基)苯胺(TAPC)层的表面的功函数。因此,在这项工作中,我们试图将MoO3掺杂到TAPC的电子阻挡层材料中,以改善有机光电探测器(OPD)的器件性能,从而有效地抑制了暗电流密度并提高了外部量子效率(EQE)。当使用5%MoO3掺杂剂时,在3 V反向偏置下的最佳OPD显示暗电流密度为1.11 nA / cm(2),在360 nm波长下的EQE为41.8%,并且对比波长超过10(12)琼斯。在这项研究中,我们发现暗电流密度的降低与TAPC的最低未占据分子轨道的较低能级和较慢的电子传输能力有关,从而能够有效地抑制偏压下OPD中的泄漏电流。此外,对于掺杂到TAPC中的MoO3的最佳浓度,该器件的EQE大大提高了。

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