Optical investigation of band-edge structure and built-in electric field of AlGaN/GaN heterostructures by means of thermoreflectance, photoluminescence, and contactless electroreflectance spectroscopy

摘要

The band-edge property and built-in electric fields of two different AlxGa1−xN/GaN(AlGaN/GaN)heterostructures (HSs) with and without an additional AlGaN inserted layer were studied by thermoreflectance (TR), photoluminescence (PL), and contactless electroreflectance (CER) techniques. The PL spectra characterize the band-edge luminescence property of GaN. Free exciton transitions of AlGaN and GaN were probed experimentally by TR. Prominent Franz–Keldysh oscillations (FKOs) of GaN and the opposite FKO phase of AlGaN were simultaneously detected by the additional AlGaN inserted sample with CER owing to the enhancement effect of built-in electric fields of GaN and AlGaN with the same polarity direction. Optoelectronics properties of the two HSs were characterized by the experimental analyses.