The particulars properties of annealing temperature and spacer thickness on cross-relaxation and decay dynamics in Aluminum Oxide upon Thulium (III) oxide nanolaminate silicon-based electroluminescent and optoelectronics devices

摘要

The effects of thermal treatment and Aluminum Oxide [Al2O3] spacer thickness on the de-excitation traces and cross-relaxation among Thulium(III) ions [Tm3+], which prominently impact on the electroluminescence (EL) from different characteristic transitions inside the devices based on Aluminum Oxide upon Thulium(III) Oxide [[Al2O3]/[Tm2O3]] nanolaminate thin solid films, were investigated. The suitable annealing temperatures (T-a) for activating [Tm3+] ions was between 600.0 degrees C and 800.0 degrees C, while higher annealing temperatures lead to the reduced EL intensity and life time, resulting from the formation of Thulium Oxide nonstoichiometric compound [TmOx] clusters or agglomerations. All phenomena confirm the critical [Al2O3] spacer thickness of around 3.0 nm, concerning both non-radioactive interaction among excited [Tm3+] ions derived from Forster mode and the acceleration distance for the injected electrons in [Al2O3] matrix.