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机译:GaN中稀土离子能级的晶体场分析
Institute of Physics Polish Academy of Sciences 02-668 Warsaw Poland;
Institute of Physics University of Tartu Riia 142 Tartu 51014 Estonia College of Mathematics and Physics Chongqing University of Posts and Telecommunications Chongqing 400065 PR China;
Institute of Physics University of Tartu Riia 142 Tartu 51014 Estonia;
Department of Electrical and Computer Engineering Texas Tech University Lubbock TX 79409 USA;
Department of Electrical and Computer Engineering Polytechnic Institute of New York University Brooklyn NY 11201 USA;
Impurity; Defect level; Condensed matter; Photoluminescence; Theoretical calculation; Local symmetry;
机译:GaN中稀土离子能级的晶体场分析
机译:新型稀土R BiY1-xRxGeO5氧化物中Eu3 +能级的晶体场分析
机译:GaN中Nd3 +(4f3)的能级的晶体场分析和塞曼分裂
机译:稀土掺杂介电晶体的能量转移和上转换
机译:离子型镧系元素晶体的稀土发光和能量转移的研究。
机译:稀土含量低的磁体的ThMn12型相:全磁化过程的晶体场分析
机译:稀土笼中立方晶体场水平的动态分裂