Hot electron distribution in quantum cascade and single stage GaAs/AlGaAs periodic superlatice structures

摘要

We report the experimental determination of the steady-state electronic distribution in the excited miniband of GaAs/Al_0.33Ga_0.67As quantum cascade (QC) devices with periodic superlattice (SL) active regions. The populations of The excited subbands in the second miniband were extracted from the analysis of the high-energy tail of interminiband Electroluminescence spectra. Single- and multiple-stage structures were investigated. We found that the excited electrons Can be described by a thermal distribution, in analogy with the case of InGaAs/InAlAs/InP structures.