Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100) GaAs

摘要

The structural characterisation of MOVPE-grown ZnMgSe and ZnSe/ZnMgSe multiple quantum wells (MQWs) is reported. Zn_0.83Mg_0.17Se epilayers and 6 periods ZnSe/Zn_0.83Mg_0.17Se MQWs having 4.5 nm thick ZnSe wells and 10.5 nm thick alloy barriers were deposited on (100) GaAs after a thin pseudomorphic ZnSe buffer. No macroscopic misorientations between ZnMgSe epilayers and GaAs lattice has been observed, but a broadening of the alloy (400) peak indicates the occurrence of extended defects.