Optical properties of fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures

摘要

Here we demonstrate the ion-implantation of fluorine as an alternative doping method for ZnMgSe/ZnSe QWs. The photoluminescence measurements of F-implanted ZnSe QWs show the correlation between the number of sharp recombination peaks of F-donor bound-excitons and the implantation dose as well as the saturation of the luminescence intensity related to a donor. When special techniques such as selective implantation through a mask and registration of single ion impacts are applied on micro-, nano-cavities, the ion implantation can be an attractive alternative fluorine doping method for quantum information technology based on fluorine impurities in ZnSe.