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ZnO nanophosphor Co doped with Ce, Eu and Tb

机译:ZnO纳米磷酸掺杂有CE,EU和TB

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摘要

ZnO nanophosphor co-doped with Ce, Eu and Tb [Zn_(1-x-y-z)O:Ce_xEu_yTb_z (x, y and z = 0.1, 0.5, and 1.0 mol.%)] was prepared by the co-precipitation method followed by sintering in the air at 700 °C. The powder XRD spectrum could be indexed using the JCPDC File No. 36-1451 implying that the doping levels investigated in the present study did not change the basic wurtzite crystal structure of the ZnO. The absence of any independent phases of the Ce, Eu and Tb confirmed the incorporation of these dopants in the ZnO lattice. The dopants could enter the ZnO lattice interstitially or/and substitutional. The substitutional incorporation could result in the development of strain in the unit cell as the radii of all the dopants are greater than Zn. This strain could be responsible for the observed shift in the peak positions of diffraction peaks; the observed shift was ~0.20° (towards the lower side) for the diffraction peak with (hkl) value (101) for ZnO doped with 0.5 mol.% Ce, Eu and Tb. On the other hand, interstitial substitution could result in the creation of the defects like vacancies. These defects could create the inter-band defect states which could emit in the visible region (400-700 nm).Emission in the visible region was observed when excited with the 280,300 and 380 nm radiation from a Xe lamp; the 280 and 300 nm excitations resulted in broad emission centered around ~510 nm while relatively sharp emission peaks were observed with 380 nm radiation; the emission intensity was found to be dependent on the dopant concentration. The chromaticity color coordinates (x and y) of the observed broad emission were calculated using the data from the emission spectrum. The best calculated values were: ⅹ = 0.33 and y = 0.34 for ZnO co-doped with Ce 0.5, Eu 0.1 and Tb 0.1 mol.%; these "x and y" values being very close to those of the "sunlight at noon" (x = 0.33 and y = 0.33), indicate the potential of this material for the realization of the white light sources.
机译:通过共沉淀法制备烧结,用Ce,Eu和Tb掺杂有Ce,Eu和Tb [Zn_(1-XYZ)O:Ce_xeu_ytb_z(x,y和z = 0.1,0.5和1.0mol.%)]在700°C的空气中。粉末XRD谱可以使用JCPDC文件No.36-1451索引,这意味着本研究中研究的掺杂水平没有改变ZnO的基本湿度晶体结构。没有CE,Eu和Tb的任何独立阶段证实了在ZnO格子中掺入这些掺杂剂。掺杂剂可以进入ZnO格子横向或/和/和替代。由于所有掺杂剂的半径大于Zn,则替代掺入可能导致单元电池中的应变的发展。该应变可以负责观察到的衍射峰的峰值位置的偏移;对于用0.5mol掺杂的ZnO,观察到的偏移为衍射峰(HKL)值(101)的衍射峰(101)为0.20°(朝向下侧)。%Ce,Eu和Tb。另一方面,间隙替代可能导致创造缺陷等空缺。这些缺陷可以产生在与XE灯的280,300和380nm辐射激发时观察到可见区域中的可见区域中的可见区域中的可见区域(400-700nm)的带状缺陷状态; 280和300nm激发导致宽度为约510nm的宽,而用380nm辐射观察到相对急剧的发射峰;发现发射强度依赖于掺杂剂浓度。使用来自发射光谱的数据计算观察到的广泛发射的色度颜色坐标(x和y)。最佳计算值为:ζ= 0.33和y = 0.34,用于ZnO与Ce 0.5,Eu 0.1和Tb 0.1mol。%;这些“x和y”值非常接近“中午的阳光”(x = 0.33和y = 0.33),表明该材料用于实现白光源的电位。

著录项

  • 来源
    《Optical and quantum electronics》 |2020年第6期|328.1-328.15|共15页
  • 作者

    Suman Rani; Bansi Lal;

  • 作者单位

    Department of Physics School of Chemical Engineering and Physical Sciences Lovely Professional University Punjab 144411 India;

    Centre for Lasers and Photonics Indian Institute of Technology Kanpur Kanpur 208016 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ZnO; Ce; Eu; Tb nano phosphor; Co-doping;

    机译:zno;CE;欧洲联盟;TB纳米磷光体;共同兴奋剂;

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