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Surface modification and optical properties of metal doped indium sulfide thin films

机译:金属掺杂硫化铟薄膜的表面改性和光学性能

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Indium sulfide (In2S3) thin films were prepared by chemical bath deposition method in same deposition conditions, and then doped by metals including Ag, Al and Cu. Produced films post annealed at 400 degrees C temperature about 1h. The effects of different metal-doping on structural, morphological and optical properties of the films were investigated by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and UV-Vis spectroscopy analyses. Produced indium sulfide thin film was amorphous and doping process lead to shifts peaks in lower angles. Morphology and nanostructure of doped films changed completely. Compact doped films have been formed. Optical constants of the produced thin films were calculated using Kramers-Kronig relations on reflectivity curves. Different doping impurities changed optical curves and band gaps.
机译:在相同的沉积条件下,通过化学浴沉积法制备硫化铟(In2S3)薄膜,然后掺杂Ag,Al和Cu等金属。产生的薄膜在400摄氏度的温度下退火大约1小时。通过X射线衍射,扫描电子显微镜,原子力显微镜和UV-Vis光谱分析研究了不同金属掺杂对薄膜结构,形貌和光学性能的影响。所生产的硫化铟薄膜是非晶态的,并且掺杂过程导致在较低角度下出现漂移峰。掺杂膜的形貌和纳米结构完全改变。形成了紧凑的掺杂膜。使用反射率曲线上的Kramers-Kronig关系来计算所产生的薄膜的光学常数。不同的掺杂杂质改变了光学曲线和带隙。

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