Study of structural, optical and photoluminescence properties of indium-doped zinc sulfide thin films for optoelectronic applications

摘要

In the present work, we have deposited indium-doped zinc sulfide (ZnS:In) thin films by chemical bath deposition technique (CBD). The structural properties studied by X-ray diffraction indicate that ZnS:In has a cubic structure with an average crystallite size 4.7-11.0 nm. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of deposited material. All the films were transparent in the visible and infrared regions (>= 60%), which allows us to use this material as an optical window or a buffer layer in solar cells. The obtained band gap energy E-g is in the range of 3.70-3.76 eV. The refractive index and thickness of ZnS:In thin films was calculated using envelope method. The variation of the refractive index along the Cauchy distribution was observed in all ZnS:In thin films. The analysis of the refractive index data through the Wemple-DiDomenico model leads to the single oscillator energy (E-0) and the dispersion energy (E-d). (C) 2015 Elsevier B.V. All rights reserved.