The present invention relates to a solar cell which uses an indium sulfide (In2S3) layer as a non-cadmium buffer layer in a CIGS thin film solar cell, a method for stacking Tin-doped indium sulfide thin films to form a buffer layer grown by a solution growth method, and a solar cell manufactured thereby. The present invention improves the light transmission and electrical conductivity of the Tin-doped indium sulfide thin film and improves the photoelectrical properties of the solar cell by lowering the energy barrier of a conduction band at the interface between CIGS and indium sulfide and reducing recombination loss.
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机译：本发明涉及一种在CIGS薄膜太阳能电池中使用硫化铟（In 2 S 3）层作为非镉缓冲层的太阳能电池，一种堆叠锡掺杂的硫化铟薄膜以形成通过生长生长的缓冲层的方法。溶液生长方法，以及由此制造的太阳能电池。本发明通过降低CIGS与硫化铟之间的界面处的导带的能垒并降低复合损失，从而改善了掺锡铟的铟薄膜的透光率和导电性，并改善了太阳能电池的光电性能。
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