Structural and opto-electrical properties of the tin-doped indium oxide thin films fabricated by the wet chemical method with different indium starting materials

摘要

Tin-doped indium oxide (ITO) thin films were fabricated by the sol-gel spin-coating method with different indium precursor solutions synthesized from In(NO_3)3 or InCb (denoted as N-ITO and Cl-ITO, respectively). For both N-ITO and Cl-ITO thin films, the increase of mobility/conductivity and the reduction of carrier concentration with increasing annealing temperatures from 400 to 700 ℃ are related to the increase of crystallization/densification and the annihilation of oxygen vacancies. The refractive index (1.84 at nductivity [(234 (These properties make the indium nitrate-derived ITO thin films have better potential applications for some commercial products.