Alloy-assisted Auger recombination in InGaN

摘要

It has been numerically investigated the effect of alloying on the Auger recombination rate in wurtzite type n-InGaN. In order to explicitly take into account the effect of alloy disorder, the calculations have been performed with a 256-atom supercell that includes In and Ga atoms randomly distributed over the supercell sites to obtain a given composition. A full band structure (no band scissors-shifting) and high-dense inhomogeneous k-point grid were used to improve the accuracy of the calculations. We show that the large number of allowed interband Auger transitions originated by the breaking of the translational periodicity plays a crucial role in the wide band gap InGaN alloys. The alloy-assisted Auger coefficients for these alloys are in the 1.0x10(-32)-4.7x10(-31)cm(6)/s range