The effect of neutron irradiation defects on electrical resistivity in FZ-silicon samples irradiated at Es-Salam research reactor

摘要

This paper reports the effect of neutron irradiation defects on electrical properties of n-type FZ-silicon via the measurements of electrical resistivity. For this purpose, FZ-silicon single crystal was irradiated with neutron fluences ranging between 1.54 x l0~(16) and 2.5 x 10~(18) cm~(-2). The samples irradiated at F_1 = 1.54 x 10~(16) cm~(-2), F_2 = 7.43 x 10~(17) cm~(-2) and F_3 = 2.5 x 10~(18) cm~(-2) were isochronally annealed from room temperature up to 750℃. It is found that, for fluences ranging respectively from 1.54 x 10~(16)cm~(-2) to 1.23 x 10~(17) cm~(-2) (stage Ⅰ) and from 3.09 x 10~(17) cm~(-2) to 2.5 x 10~(18) cm~(-2) (stage Ⅱ) the resistivity is linearly related to the neutron fluence with two different slopes. The annealing temperature dependence on the electrical resistivity fits well the relation ρ_0 exp(-CT), where C is a constant depending on the neutron fluence and ρ_0 is approximately equal to the resistivity after irradiation. For annealing temperatures higher than 550℃, we have found that the resistivity is a decreasing function with respect to the neutron fluence and the transmutation-doped phosphorus atoms become electrically active.