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Optimization of ECR ion sources for high charge state beam generation

机译:优化ECR离子源以产生高电荷态束

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The most important developments in the field of ion sources have been based on the generation of warm plasmas by means of microwaves at different frequencies.rnDifferent type of sources as electron cyclotron resonance ion sources (ECRIS) and microwave discharge ion sources have been designed and built at INFN-LNS, at operating frequencies between 2.45 and 28 GHz, with different purposes ranging from high efficiency ionization or high current production of light ions to high charge state generation of heavy ion beams.rnThe production of intense beams of highly charged ions (HCIs) has been a major task in the last few years.rnDifferent solutions have been proposed to improve the production rate. In particular the microwave coupling to plasma can be significantly improved with beneficial effects on ion beam current.rnExperimental activities in the field of microwave coupling to plasmas at different frequencies (14, 18 and 28 GHz) along with theoretical modelling of the plasma formation and confinement have been undertaken to improve production of HCI.rnThe description of the different methods and tasks to improve the performances of such sources will be carried out, along with a scenario of the existing and forthcoming ECRIS for HCI production.
机译:离子源领域最重要的发展是基于通过不同频率的微波产生温暖的等离子体。rn设计并建造了不同类型的源,如电子回旋共振离子源(ECRIS)和微波放电离子源在INFN-LNS上,工作频率在2.45至28 GHz之间,其目的不一,从高效电离或高电流产生轻离子到产生高电荷态重离子束.rn高强度离子束(HCI)的产生)是最近几年的主要任务。为提高生产率,提出了各种解决方案。特别是可以显着改善对等离子体的微波耦合,并对离子束电流产生有益影响。rn在不同频率(14、18和28 GHz)的微波耦合等离子体领域中的实验活动,以及等离子体形成和限制的理论模型已经进行了改进HCI的生产。将对改善这种来源的性能的不同方法和任务进行描述,并针对HCI生产中现有和即将推出的ECRIS进行情景介绍。

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