Simulation of ion beam induced current in radiation detectors and microelectronic devices

摘要

Ion Beam Induced Charge (IBIC) is the basic mechanism of the operation of semiconductor detectors and it can lead to Single Event Effects (SEEs) in microelectronic devices. To be able to predict SEEs in ICs and detector responses one needs to be able to simulate the radiation-induced current as the function of time on the electrodes of the devices and detectors. There are analytical models, which work for very simple detector configurations, but fail for anything more complex. Technology Computer Aided Design (TCAD) programs can simulate this process in microelectronic devices, but these TCAD codes costs hundreds of thousands of dollars and they require huge computing resources. In addition, in certain cases they fail to predict the correct behavior. Here a simulation model based on the Gunn theorem was developed and used with the COMSOL Multiphysics framework, version 3.5. In the model, the induced current can be calculated both directly and in certain cases using the powerful adjoint method. A brief description of the model will be given in the paper with examples for detectors and microelectronic devices using both the direct and the adjoint method.