Optical properties of In_xGa_(1-x)P/InP grown at high fluence Ga~+ implantation on InP using focused ion beam

摘要

Single-crystalline InP(l 0 0) substrate was implanted by 30 keV Ga+ ions with fluences of 1 × 10~(16)-1.5 × 10~(17)cm~(-2) followed by post-annealing treatment at 750 °C to recover implantation-induced structural defects and activate dopants into the lattices. The optical property, composition, and microstructure of the Ga~+-implanted InP were studied by Raman spectroscopy and transmission electron microscopy (TEM). Raman spectra show that the In_xGa_(1-x)P phase is formed at a critical fluence of 7 × 10~(16) cm~(-2). The newly grown phase was identified with the appearance of Ga rich TO_(InP) and In rich TO_(GaP) modes of a random alloy in the 1 bond-2 phonon mode configuration along with TEM structural identification.