Surface modification of oxide layer on Si using highly charged ions

摘要

Surface modification using highly charged ions is presented. The surface of a Si wafer which is covered with a native oxide layer is used as a sample. The sample was irradiated with Ar~(11+) ions at a fluence of 10~(13)-10~(14)/cm~2. The Ar~(11+) ions were obtained from an electron beam ion source (Kobe EBIS). The surface was investigated using secondary electron microscopy. X-ray photoelectron spectroscopy and high-resolution electron energy loss spectroscopy. The obtained results suggest that the native oxide layer is sputtered by the irradiation of Ar~(11+) ions and that the structural modification makes the density of the oxide layer lower and the electric conductivity higher.