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机译:磷掺杂的硅纳米晶体对掺杂剂活化的尺寸限制
Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Cuildford GU2 5XH, UK;
Surrey Ion Beam Centre, Advanced Technology Institute, University of Surrey, Cuildford GU2 5XH, UK;
Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL, UK;
Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL, UK;
Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL, UK;
Photon Science Institute, School of Electrical and Electronic Engineering, Alan Turing Building, University of Manchester, Manchester M13 9PL, UK;
Department of Engineering Physics and the Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton L8S 4L7, Ontario, Canada;
Department of Engineering Physics and the Centre for Emerging Device Technologies, McMaster University, 1280 Main Street West, Hamilton L8S 4L7, Ontario, Canada;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK;
Silicon nanocrystals; Phosphorus; Ion implantation;
机译:磷掺杂对富硅氮化硅膜中硅纳米晶形成的影响
机译:将磷掺杂到硅纳米晶体中的尺寸限制
机译:在硅化镍过程中接触硅掺杂的硅掺杂的中等掺杂磷发射极。
机译:磁阻对磷掺杂硅掺杂密度的依赖性
机译:掺杂剂分布对掺锡氧化铟纳米晶体和纳米晶体薄膜光电性能的影响。
机译:硅纳米晶体:阳离子胶体纳米晶体具有胶体稳定性pH无关的正表面电荷和尺寸可调的近红外至红色光谱范围内的光致发光(Adv。Sci。2/2016)
机译:硅纳米晶中的磷掺杂