PHOSPHOROUS-COMPRISING DOPANTS AND METHODS FOR FORMING PHOSPHOROUS-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING PHOSPHOROUS-COMPRISING DOPANTS

摘要

Phosphorous-comprising dopants, methods for forming phosphorous-doped regions in a semiconductor material, and methods for fabricating phosphorous-comprising dopants are provided. In one embodiment, a phosphorous-comprising dopant comprises a phosphorous source comprising a phosphorous-comprising salt, a phosphorous-comprising acid, phosphorous-comprising anions, or a combination thereof, an alkaline material, cations from an alkaline material, or a combination thereof, and a liquid medium.