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Effective Method for Decreasing Detection Limit of Dopant Concentration in Semiconductor Using Dual SDD Analysis System

机译：双SDD分析系统降低半导体掺杂剂浓度检测极限的有效方法

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K. Fukunaga; N. Endo; M. Suzuki; Y. Kondo;
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1. Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of gallium implantation [J] . David Cooper, Cyril Ailliot, Jean-Paul Barnes, Ultramicroscopy . 2010,第5期

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机译：理论限制，遗产和展望：CANTum Monte Carlo方法（在古典计算机上）接口与半导体精密放置掺杂原子的实验的解释？
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7. Extending the detection limit of dopants for focused ion beam prepared semiconductor specimens examined by off-axis electron holography [O] . Cooper David, Rivallin Pierrette, Hartmann Jean-Michel, 2009

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Effective Method for Decreasing Detection Limit of Dopant Concentration in Semiconductor Using Dual SDD Analysis System

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