机译:50和250 keV质子撞击Z = 26-30的元素的K和L壳X射线生产截面
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China School of Science, Xi'an Jiaotong University, Xi'an 710049, China;
Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
X-ray spectrum; Proton impact; PIXE; Production cross section; ECPSSR theory;
机译:对于34 <或= Z <或= 53的元素,L-壳X射线产生的总横截面为400-700 keV质子冲击。
机译:使用6-30keV电子撞击测量TE元件的总L-壳X射线生产横截面
机译:质子诱发的某些反铀元素的L壳电离和X射线产生截面的计算
机译:能量低于1 MeV的质子对L壳X射线产生的横截面的现状
机译:从10--25 keV质子的碰撞中,氦的n = 2激发的总横截面的测量。
机译:通过放牧入射率小角X射线散射(吉安斯)技术用170keV质子照射聚醚醚酮膜的微观结构研究
机译:用10-30keV电子测量W,Pt和Au的L壳x射线产生截面