机译:单晶MeV硅离子注入过程中空位簇相关缺陷的产生
Australian Nuclear Science and Technology Organization, Locked Bag 2001, Kirrawee DC NSW 2232, Australia;
Ruder Boskovic Institute, Bijenicka cesta 54, P.O. Box 180, 10002 Zagreb, Croatia;
Australian Nuclear Science and Technology Organization, Locked Bag 2001, Kirrawee DC NSW 2232, Australia;
Jozef Stefan Institute, 1000 Ljubljana, Slovenia;
Physics Department and NIS Excellence Centre, University of Torino, INFN - sez. Torino, CNISM - sez. Torino, via P. Giuria 1, 10125 Torino, Italy;
Australian Nuclear Science and Technology Organization, Locked Bag 2001, Kirrawee DC NSW 2232, Australia;
Physics Department and NIS Excellence Centre, University of Torino, INFN - sez. Torino, CNISM - sez. Torino, via P. Giuria 1, 10125 Torino, Italy;
Radiation damage; DLTS; Vacancy; Cluster; Single ion implantation;
机译:低剂量MeV自离子注入n型硅中空位相关缺陷的退火动力学-艺术。没有。 195211
机译:低剂量MeV自离子注入n型硅中空位相关缺陷的退火动力学-艺术。没有。 195211
机译:硅离子轰击时单碰撞级联中空位点缺陷的产生
机译:离子植入硅空位相关缺陷型空位的植入角度依赖性研究
机译:6氢碳化硅和4氢碳化硅中本征和离子注入引起的缺陷的电学和光学表征。
机译:钻石中单个硅空位色心的荧光偏振转换
机译:高效生成纳米级单硅空位缺陷 碳化硅阵列