机译:高能C_(60)离子辐照的非晶氮化硅的溅射:优先溅射以及电子和碰撞溅射之间的协同效应
Department of Micro Engineering, Kyoto University, Kyoto-daigaku-Katsura, Nishikyo, Kyoto 615-8540, Japan;
Department of Micro Engineering, Kyoto University, Kyoto-daigaku-Katsura, Nishikyo, Kyoto 615-8540, Japan;
Department of Micro Engineering, Kyoto University, Kyoto-daigaku-Katsura, Nishikyo, Kyoto 615-8540, Japan;
Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki Gumma 370-1292, Japan;
Takasaki Advanced Radiation Research Institute, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki Gumma 370-1292, Japan;
Nuclear Science Research Institute, Japan Atomic Energy Agency, Tokai, Naka, Ibaraki 319-1195, Japan;
Nuclear Science Research Institute, Japan Atomic Energy Agency, Tokai, Naka, Ibaraki 319-1195, Japan;
CIMAP-GANIL (CEA-CNRS-ENSICAEN-Universite de Caen Basse Normandie), Bd. H. Becquerel, 14070 Caen, France;
Department of Micro Engineering, Kyoto University, Kyoto-daigaku-Katsura, Nishikyo, Kyoto 615-8540, Japan;
Sputtering; C_(60); Amorphous silicon nitride;
机译:离子注入后从非晶氮化碳(a-C:N)薄膜的表面进行优先溅射
机译:溅射沉积氮化硼和非晶碳薄膜生长过程中非沉积含能物种的影响
机译:飞行时间二次离子质谱分析用于深度剖析金/硅和砷化镓多层样品的C_(60)〜+和Cs〜+溅射离子
机译:溅射时间和射频功率对射频溅射沉积在晶体硅上的非晶硅(非掺杂)硅膜电流电压特性的影响
机译:溅射Bi和优先溅射非均质合金。
机译:镧的非反应性溅射沉积和氮化镧的反应性溅射沉积过程中结构形成的原位和实时监测
机译:通过离子溅射产生的含非晶硼的硅碳氮化物
机译:辐射诱导偏析和优先溅射对合金溅射速率的影响