Dispersion of heavy ion deposited energy in nanometric electronic devices: Experimental measurements and simulation possibilities

摘要

The dispersion of heavy ion deposited energy is explored in nanometric electronic devices. Experimental data are reported, in a large thin SOI diode and in a SOI FinFET device, showing larger distributions of collected charge in the nanometric volume device. Geant4 simulations are then presented, using two different modeling approaches. Both of them seem suitable to evaluate the dispersion of deposited energy induced by heavy ion beams in advanced electronic devices with nanometric dimensions.