Primary investigation the impacts of the external memory (DDR3) failures on the performance of Xilinx Zynq-7010 SoC based system (MicroZed) using laser irradiation

摘要

The impacts of the external dynamic memory (DDR3) failures on the performance of 28 nm Xilinx Zynq-7010 SoC based system (MicroZed) were investigated with two sets of 1064 nm laser platforms. The failure sensitive area distributionsons on the back surface of the test DDR3 were primarily localized with a CW laser irradiation platform. During the CW laser scanning on the back surface of the DDR3 of the test board system, various failure modes except SEU and SEL (MBU, SEFI, data storage address error, rebooting, etc) were found in the testing embedded modules (ALU, PL, Register, Cache and DMA, etc) of SoC. Moreover, the experimental results demonstrated that there were 16 failure sensitive blocks symmetrically distributed on the back surface of the DDR3 with every sensitive block area measured was about 1 mm × 0.5 mm. The influence factors on the failure modes of the embedded modules were primarily analyzed and the SEE characteristics of DDR3 induced by the picoseconds pulsed laser were tested. The failure modes of DDR3 found were SEU, SEFI, SEL, test board rebooting by itself, unknown data, etc. Furthermore, the time interval distributions of failure occurrence in DDR3 changes with the pulsed laser irradiation energy and the CPU operating frequency were measured and compared. Meanwhile, the failure characteristics of DDR3 induced by pulsed laser irradiation were primarily explored. The measured results and the testing techniques designed in this paper provide some reference information for evaluating the reliability of the test system or other similar electronic system in harsh environment.