首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >PIXE-measurement of Kα X-ray production cross sections for 1-MeV C~+ -ions in thick samples of Si, Fe, Cu and Zn
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PIXE-measurement of Kα X-ray production cross sections for 1-MeV C~+ -ions in thick samples of Si, Fe, Cu and Zn

机译:在Si,Fe,Cu和Zn的厚样品中为kαX射线产生横截面的KαX射线产生横截面的PIXE测量

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摘要

Particle-Induced X-ray Emission (PIXE) using heavy ions proved to be an alternative with respect to PIXE using light protons due to relatively large cross sections. In this work we explored the capabilities of PIXE with using singly-charged carbon ions at relatively low energy of 1 MeV (or 83 keV/amu) to measure K alpha X-ray production cross sections. The measurement was performed for thick samples of Si, Fe, Cu and Zn, using the standard 2-MeV proton-induced cross sections as the reference. For the measurement from thick samples, we adopted a special multi-slabs method in the calculation by considering the sample thickness effect. The effective ion range was divided into a number of thin slabs in which the energy dependent cross section and the thickness dependent Xray transmission were varied. The paper describes details of the measurement principle and method and reports the result. The resulting data obtained from the present work were compared with those from the PWBA and ECPSSR theories, the simple thin-film method and the measurement of thin film samples and discussed for the validity of our result.
机译:使用重离子的粒子诱导的X射线发射(PIXE)被证明是由于相对较大的横截面,使用光质子的PEXE是一种替代方案。在这项工作中,我们探讨了使用单电荷的碳离子在1 meV(或83keV / Amu)的相对低的能量下使用单电荷的碳离子来测量kαX射线产生横截面。使用标准的2-MeV质子诱导的横截面作为参考,对Si,Fe,Cu和Zn的厚样品进行测量。对于厚样品的测量,我们通过考虑样品厚度效应来在计算中采用特殊的多板方法。将有效的离子范围分成多个薄板,其中能量相关的横截面和厚度依赖性X射线变速器变化。本文描述了测量原理和方法的细节,并报告结果。将从本作工作中获得的所得数据与来自PWBA和ECPSSR理论的那些进行比较,简单的薄膜方法和薄膜样品的测量,并讨论了我们的结果的有效性。

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