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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >PIXE-measurement of Kα X-ray production cross sections for 1-MeV C~+ -ions in thick samples of Si, Fe, Cu and Zn
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PIXE-measurement of Kα X-ray production cross sections for 1-MeV C~+ -ions in thick samples of Si, Fe, Cu and Zn

机译:硅,铁,铜和锌厚样品中1-MeV C〜+离子的KαX射线产生截面的PIXE测量

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摘要

Particle-Induced X-ray Emission (PIXE) using heavy ions proved to be an alternative with respect to PIXE using light protons due to relatively large cross sections. In this work we explored the capabilities of PIXE with using singly-charged carbon ions at relatively low energy of 1 MeV (or 83 keV/amu) to measure K alpha X-ray production cross sections. The measurement was performed for thick samples of Si, Fe, Cu and Zn, using the standard 2-MeV proton-induced cross sections as the reference. For the measurement from thick samples, we adopted a special multi-slabs method in the calculation by considering the sample thickness effect. The effective ion range was divided into a number of thin slabs in which the energy dependent cross section and the thickness dependent Xray transmission were varied. The paper describes details of the measurement principle and method and reports the result. The resulting data obtained from the present work were compared with those from the PWBA and ECPSSR theories, the simple thin-film method and the measurement of thin film samples and discussed for the validity of our result.
机译:相对于使用轻质子的PIXE,由于横截面相对较大,因此证明了使用重离子的粒子诱导X射线发射(PIXE)。在这项工作中,我们探索了在1 MeV(或83 keV / amu)的较低能量下使用单电荷碳离子测量PIXE的功能,以测量K alpha X射线产生的截面。使用标准的2 MeV质子诱导的截面作为参考,对Si,Fe,Cu和Zn的厚样品进行了测量。对于厚样品的测量,我们在考虑样品厚度影响的情况下采用特殊的多平板方法进行计算。有效离子范围被分成许多薄板,其中取决于能量的横截面和取决于厚度的X射线透射率是变化的。本文详细介绍了测量原理和方法,并报告了结果。从当前工作中获得的结果数据与PWBA和ECPSSR理论,简单薄膜方法和薄膜样品的测量结果进行了比较,并讨论了我们的结果的有效性。

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