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A measurement of the Lorentz angle in silicon strip sensors at cryogenic temperature

机译:低温下硅带传感器中洛伦兹角的测量

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摘要

A geometric model of charge collection has been developed to measure the Lorentz angle in silicon sensors. The model relates the track inclination to the average cluster width. A Lorentz angle of 19.6 ± 0.27_(-0.5)~(1.0)° was measured by fitting the model to cosmic ray data collected with the double-sided silicon strip sensors of the ATHENA antihydrogen detector. This measurement corresponds to holes drifting in sensors operated at 130 K, in a 3 T magnetic field and with an average internal electric field of 1.3 kV/cm. Comparisons of charge sharing between strips and track residuals for data taken with and without magnetic field are also presented and support this measurement.
机译:已经开发出电荷收集的几何模型来测量硅传感器中的洛伦兹角。该模型将轨道倾角与平均簇宽度相关联。通过将模型拟合到使用ATHENA抗氢检测器的双面硅条传感器收集的宇宙射线数据,测量到的洛伦兹角为19.6±0.27 _(-0.5)〜(1.0)°。该测量结果对应于在3 T磁场中,平均内部电场为1.3 kV / cm的情况下以130 K工作的传感器中的孔漂移。还介绍了在带磁场和不带磁场的情况下,条带之间的电荷共享和轨迹残差之间的比较,并支持此测量。

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