Radiation hardness of optoelectronic components for the optical readout of the ATLAS inner detector

摘要

Optical links are used for data transmission of the ATLAS inner detector in a radiation hazard environment at the Large Hadron Collider (LHC). The radiation tolerance is studied for the optoelectronics of GaAs VCSEL and epitaxial Si PIN with 30 and 70 MeV protons at CYRIC. High speed Si and GaAs PIN photo-diodes are also investigated for upgrade to super-LHC. The annealing of GaAs VCSEL by charge injection is characterized. The GaAs devices show approximately linear degradations to fluence. The dependence on proton energy is compared to the Non-Ionizing Energy Loss calculations.