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Photonic crystals: A novel approach to enhance the light output of scintillation based detectors

机译:光子晶体:一种增强基于闪烁的探测器的光输出的新颖方法

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摘要

Future high-energy physics (HEP) experiments as well as next generation medical imaging applications are more and more pushing towards better scintillation characteristics. One of the problems in heavy scintillating materials is related to their high electronic density, resulting in a large index of refraction. As a consequence, most of the scintillation light produced in the bulk material is trapped inside the crystal due to total internal reflection. The same problem also occurs with light emitting diodes (LEDs) and has for a long time been considered as a limiting factor for their overall efficiency. Recent studies have shown that those limits can be overcome by means of light scattering effects of photonic crystals (PhCs). In our simulations we could show light yield improvements between 90% and 110% when applying PhC structures to different scintillator materials. To evaluate the results, a PhC modified scintillator was produced in cooperation with the NIL (Nanotechnology Institute of Lyon). By using silicon nitride (Si_3N_4) as a transfer material for the PhC pattern and a 70 nm thick Indium Tin Oxide (ITO) layer for the electrical conductivity during the lithography process, we could successfully fabricate first samples of PhC areas on top of LYSO crystals.
机译:未来的高能物理(HEP)实验以及下一代医学成像应用正越来越多地朝着更好的闪烁特性发展。重的闪烁材料的问题之一与它们的高电子密度有关,导致大的折射率。结果,在块状材料中产生的大多数闪烁光由于全内反射而被捕获在晶体内部。发光二极管(LED)也出现相同的问题,长期以来一直被认为是其整体效率的限制因素。最近的研究表明,可以通过光子晶体(PhC)的光散射效应来克服这些限制。在我们的仿真中,当将PhC结构应用于不同的闪烁体材料时,我们可以显示出90%到110%的光产率提高。为了评估结果,与NIL(里昂纳米技术研究所)合作生产了经过PhC改性的闪烁体。通过使用氮化硅(Si_3N_4)作为PhC图案的转移材料和70 nm厚的氧化铟锡(ITO)层在光刻过程中的导电性,我们可以成功地在LYSO晶体顶部制造PhC区域的第一个样品。

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