X-ray detector i.e. silicon based X-ray detector, has scintillator formed such that light of different wavelengths is producible based on penetration depth, and active array formed such that wavelengths of produced light are detectable

摘要

The detector has a scintillator (11) for conversion of X-ray quantums (17.1-17.3) in light. An active array of pixel elements (15) comprises a photo diode (12) and an electric switching element (16) for converting light to image information. The scintillator is formed such that the light of different wavelengths is producible based on a penetration depth of the quantums into the scintillator. The array is formed such that the wavelengths of the produced light are detectable. The scintillator comprises a doping profile with doping concentration varied relative to a depth of the scintillator. The detector is formed complementary metal oxide semiconductor (CMOS) technology, and the photodiodes are designed as Bayer sensors.