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Thin hybrid pixel assembly fabrication development with backside compensation layer

机译:具有背面补偿层的薄型混合像素组件制造开发

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摘要

The ATLAS and CMS experiments will both replace their entire tracking systems for operation at the HL-LHC in 2026. This will include a significantly larger pixel systems, for example, for ATLAS approximately 15 m~2. To keep the tracker material budget low it is crucial to minimize the mass of the pixel modules via thinning both the sensor and readout chip to about 150 μm each. The bump yield of thin module assemblies using solder based bump bonding can be problematic due to wafer bowing during solder reflow at high temperature. A new bump-bonding process using backside compensation on the readout chip to address the issue of low yield will be presented. The objective is to compensate dynamically the stress of the front side stack by adding a compensating layer to the backside of the wafer. A SiN and Al:Si stack has been chosen for the backside layer. The bow reducing effect of applying a backside compensation layer will be demonstrated using the FE-I4 wafer. The world's first results from assemblies produced from readout wafers thinned to 100 μm with a stress compensation layer are presented with bond yields close to 100% measured using the FE-I4 readout chip.
机译:ATLAS和CMS实验都将在2026年取代它们的整个跟踪系统,以便在HL-LHC上运行。这将包括更大的像素系统,例如ATLAS约为15 m〜2。为了保持跟踪器的材料预算低,至关重要的是,通过将传感器和读出芯片都减薄到150μm,以最小化像素模块的质量。使用基于焊料的凸点接合的薄模块组件的凸点成品率可能会由于在高温焊料回流期间晶圆弯曲而出现问题。将提出一种新的凸点键合工艺,该方法使用读出芯片上的背面补偿来解决低良率的问题。目的是通过在晶片的背面增加补偿层来动态地补偿正面堆叠的应力。选择了SiN和Al:Si叠层作为背面层。使用FE-I4晶圆将演示减少背面补偿层的弯曲变形效果。用FE-I4读出芯片测得的粘合率接近100%,这是由用应力补偿层薄至100μm的读出晶片制成的组件产生的世界首创结果。

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  • 作者单位

    Experimental Panicle Physics Croup, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ, UK;

    Experimental Panicle Physics Croup, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ, UK;

    Experimental Panicle Physics Croup, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ, UK;

    Experimental Panicle Physics Croup, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ, UK;

    Experimental Panicle Physics Croup, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ, UK;

    Experimental Panicle Physics Croup, SUPA School of Physics and Astronomy, The University of Glasgow, Glasgow G12 8QQ, UK;

    CEA Leti, M1NATEC, 17 rue des Martyrs, F380S4, Grenoble, France;

    CEA Leti, M1NATEC, 17 rue des Martyrs, F380S4, Grenoble, France;

    CEA Leti, M1NATEC, 17 rue des Martyrs, F380S4, Grenoble, France;

    Advacam Oy, Tietotie 3, 02150 Espoo, Finland;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Pixel detector; Silicon sensor; Pixel assembly; Thin readout chip;

    机译:像素检测器;硅传感器;像素组装;薄型读出芯片;

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