Heavily p-type Doping into Group-III Nitrides and Their Application to Heterojunction Bipolar Transistors

摘要

The wide bandgap of group-III nitrides makes these materials suitable for devices operating at high temperatures and for ones with high output power. However, when using these materials, it is difficult to obtain p-type layers with high hole concentrations at room temperature. This means that devices made of group-III nitrides and using p-n junctions may be unable to attain reaconable performance or may become degraded in a relatively short time. We have obtained p-type layers with high hole concen- trations using the characteristics of group-III nitrides and applied them to such devices as heterojunction bipolar transistors.