A Bicolor Photodetector of Ultraviolet Radiation Based on a Low-Dimensional ZnCdS/ZnMgS/GaP Heterostructure

摘要

A bicolor photodetector of ultraviolet radiation based on a ZnCdS/ZnMgS/GaP heterostructure is designed and analyzed. At low bias voltages, the detector has a narrowband response at a wavelength of 350 nm, which is determined by the composition of the ZnCdS quantum well. As the bias increases to 80-100 V, the maximum sensitivity of the detector is shifted to a wavelength of 450 nm with subsequent rapid decrease. In this case, the spectral sensitivity characteristic of the detector covers the region of the maximum pigmentation effect of solar radiation.