Pursuit of Future Interconnect Technology with Aligned Carbon Nanotube Arrays [Nanopackaging]

摘要

As the Feature size of interconnect technology continues to scale down to nanometer sizes, the state-of-the-art Cu interconnect is expected to run into its physical limit in the near future. Carrier scattering at surfaces and grain boundaries leads to a dramatic increase of Cu resistivity at the nanoscale, resulting in increasing resistance–capacitance signal delay [1].