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Preparation of Aluminum Oxide Layer for Gate Insulator Application in Organic Thin-Film Transistors

机译:有机薄膜晶体管栅绝缘子用氧化铝层的制备

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摘要

The characteristics of organic thin-films transistors (OTFTs) with the anodized aluminum oxide insulator have been investigated. The OTFT with the barrier-type aluminum oxide insulator exhibited the mobility of 0.09 cm2/Vs, the subthreshold slope of 1.3 V/decade, the threshold voltage of −2.2 V, and the on/off ratio of 7.7 × 104, which are superior to those for the device with the porous-type insulator. The smooth surface of the barrier-type film is found to contribute to a long range hopping of charge carriers in the conducting channel by decreasing the activation energy for the conduction of charge carriers.
机译:研究了带有阳极氧化铝绝缘体的有机薄膜晶体管(OTFT)的特性。带有势垒型氧化铝绝缘体的OTFT的迁移率为0.09 cm 2 / Vs,阈值下限为1.3V /十倍,阈值电压为2.2V, 7.7×10 4 的开/关比,优于具有多孔绝缘子的器件的开/关比。发现阻挡型膜的光滑表面通过降低用于电荷载流子传导的活化能而有助于传导通道中电荷载流子的长距离跳跃。

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