ORGANIC THIN-FILM TRANSISTOR USING AMORPHOUS METAL OXIDE INTERLAYER BETWEEN ORGANIC INSULATOR AND ORGANIC SEMICONDUCTOR

摘要

The present invention relates to an organic thin-film transistor using an amorphous metal oxide interlayer between an organic insulator and an organic semiconductor, a manufacturing method thereof, and a method to improve electrical characteristics of an organic thin-film transistor using the same. More specifically, a molecular alignment of the organic semiconductor can be improved without deteriorating insulating characteristics of the organic insulator by forming an amorphous metal oxide between the organic insulator and the organic semiconductor; for example, an amorphous alumina interlayer, and electrical characteristics of the organic thin-film transistor can be improved by enhancing the charge transfer by a residual precursor material to form the amorphous metal oxide interlayer; finally improving the performance of the device. In addition, the amorphous metal oxide interlayer between an organic insulator and an organic semiconductor can be formed by coating and low-temperature heat treating by a solution process; thereby being applied to even a transparent polymer substrate, be economical on the cost side, and simplify the process, thereby being useful for the production of next-generation flexible organic thin-film transistor.