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首页> 外文期刊>Molecular Crystals & Liquid Crystals >Bias Voltage Effect on Electrical Properties of N-type Polymeric Field Effect Transistors with Dual Gate Electrodes
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Bias Voltage Effect on Electrical Properties of N-type Polymeric Field Effect Transistors with Dual Gate Electrodes

机译:偏置电压对具有双栅电极的N型聚合物场效应晶体管电性能的影响

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摘要

We investigated the bias voltage effect on the electrical properties of n-type polymer field-effect transistors (FETs) with dual gate electrodes. The electrical characteristics of such polymer FETs were measured as a function of the sweeping voltage at one gate electrode when the other gate electrode was floated or biased. The hysteresis was negligible when the top gate voltage was swept while the bottom gate was biased. The threshold voltage decreases and the mobility increases with increasing the bottom gate bias due to the increase of mobile charges.View full textDownload full textKeywordsDual gate, organic field-effect transistor, n-type polymer semiconductor, threshold voltageRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; Add to shortlist Link Permalink http://dx.doi.org/10.1080/15421406.2012.702377
机译:我们研究了偏置电压对具有双栅电极的n型聚合物场效应晶体管(FET)的电性能的影响。当另一栅电极浮置或偏置时,根据一个栅电极处的扫描电压来测量这种聚合物FET的电特性。当顶栅电压被偏压而底栅被扫掠时,磁滞可以忽略不计。由于移动电荷的增加,阈值电压随着底栅偏压的增加而降低,并且迁移率增加。查看全文下载全文关键词双栅,有机场效应晶体管,n型聚合物半导体,阈值电压相关var addthis_config = {ui_cobrand:“泰勒和弗朗西斯在线”,services_compact:“ citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,更多”,发布号:“ ra-4dff56cd6bb1830b”};添加到候选列表链接永久链接http://dx.doi.org/10.1080/15421406.2012.702377

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