Modelling of crosstalk in differential through silicon vias for three-dimensional integrated circuits

摘要

The crosstalk effects of differential through silicon vias (D-TSVs) are studied. The equivalent circuit model is developed, with the circuit elements extracted analytically. Using the three-dimensional (3D) full-wave field solver HFSS, the circuit model is validated up to 100 GHz. By virtue of the circuit model, the noise couplings in the D-TSVs are evaluated. It is found that the noise coupling can be cancelled in the D-TSVs for a particular case. Finally, the influence of floating silicon substrate on the crosstalk in the D-TSVs is investigated.