首页> 中文期刊> 《中国物理:英文版》 >Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits

Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits

         

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  • 来源
    《中国物理:英文版》 |2014年第3期|591-596|共6页
  • 作者单位

    School of Information Science and Engineering, Ningbo University, Ningbo 315211, China;

    School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;

    School of Information Science and Engineering, Ningbo University, Ningbo 315211, China;

    School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;

    School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;

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  • 正文语种 eng
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