Improving Accuracy and Reliability of Microwave On-wafer Silicon Device Measurements

摘要

This article summarizes recent research findings and general guidelines for microwave on-wafer measurement of devices fabricated using silicon technologies. Issues specific to low resistivity substrates and low conductance metallization are detailed, and robust design and measuring techniques are suggested to enhance both reliability and accuracy of on-wafer measurements. To apply proper compensation of parasitic effects, impedance standard substrate (ISS) calibration combined with successive de-embedding is discussed, on-wafer measurements are assessed and proper measures are suggested. The effectiveness of such measures as well as various silicon-specific effects are illustrated using device and structure measurements. Finally, novel techniques are proposed that may be used to evaluate the accuracy of a given calibration/de-embedding method.