A 0.85 THz Low Noise Amplifier Using InP HEMT Transistors

摘要

In this letter, the first packaged THz solid-state amplifier operating at 0.85 THz is reported. The InP HEMT amplifier achieves a noise figure as low as 11.1 dB with an associated gain of 13.6 dB at 0.85 THz using high InP HEMT transistors in a 10-stage coplanar waveguide integrated circuit. Output power up to 0.93 mW is measured.