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机译:AlGaN / GaN Hemts内在电容温度依赖性非线性的分析与建模
Natl Univ Singapore Dept Elect & Comp Engn Singapore 117576 Singapore|Natl Univ Singapore Suzhou Res Inst Suzhou 215123 Peoples R China;
Natl Univ Singapore Dept Elect & Comp Engn Singapore 117576 Singapore|Natl Univ Singapore Suzhou Res Inst Suzhou 215123 Peoples R China;
Natl Univ Singapore Dept Elect & Comp Engn Singapore 117576 Singapore|Natl Univ Singapore Suzhou Res Inst Suzhou 215123 Peoples R China;
Natl Univ Singapore Dept Elect & Comp Engn Singapore 117576 Singapore|Natl Univ Singapore Suzhou Res Inst Suzhou 215123 Peoples R China;
Temperature dependence; Capacitance; MODFETs; HEMTs; Temperature measurement; Wide band gap semiconductors; Aluminum gallium nitride; AlGaN; GaN high electron mobility transistors (HEMTs); intrinsic capacitances; large-signal modeling; thermal effects;
机译:AlGaN / GaN HEMT的大信号紧凑模型的分析栅极电容模型
机译:考虑CPW电容的AlGaN / GaN HEMT的小信号建模
机译:基于紧凑的基于电荷的AlGaN / GaN HEMT中电流和电容的物理模型
机译:AlGaN / GaN HEMT器件中固有电容的紧凑建模
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:AlGaN / GaN HEMT大信号建模中的IV扭结效应研究
机译:AlGaN / GaN HFET的鳍和岛隔离以及AlGaN / GaN HFET的漏电流特性随温度变化的模型