110+ GHz Transimpedance Amplifier in InP-HBT Technology for 100 Gbit Ethernet

摘要

A 50 ${rm dB}mathchar"702D Omega $ transimpedance amplifier (TIA) with a bandwidth greater than 110 GHz has been demonstrated using InP HBT technology. The wide-band amplifier with a ${rm cutoff ~frequency}> 110~{rm GHz}$ was designed and fabricated in HRL Laboratories' G4 0.25 $mu{rm m}$ InP HBT IC technology. The amplifier operates at $-4.0 ~{rm V}$ with a current draw of 76 mA for a power consumption of 304 mW. The basic Cherry-Hooper gain cell is used with a single-ended input and a differential output buffer stage.