A simple thermo-compression bonding setup for wire bonding interconnection in pressure sensor silicon chip packaging

摘要

In the process of piezo-resistive pressure sensor packaging, a simple thermo-compression bonding setup has been fabricated to achieve the wire bonding interconnection of a silicon chip with printed circuit board. An annealed gold wire is joined onto a pad surface with a needle-like chisel under a force of 0.5–1.5 N/point. The temperature of the substrate was maintained in the range of 150–200°C and the temperature of the chisel was fixed at around 150°C during wire bonding operation. The tensile strength of the wire bonding was measured with a bonding tester by the destructive-pulling experiment and was found to be at the average of 132 mN/mm2. The microstructure of the bonding point was examined by scanning electron microscopy. The interface of the thermo-compression boning was shown to possess an acceptable level of reliability for a micro-electromechanical system (MEMS)-based device. The results showed that this setup can be easily operated for fabrication and is suitable for fabricating not only low-cost pressure sensors, but also other MEMS devices.