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An effective pre-store/pre-load method exploiting intra-request idle time of NAND flash-based storage devices

机译:利用基于NAND闪存的存储设备的请求内空闲时间的有效预存储/预加载方法

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摘要

NAND flash-based storage devices (NFSDs) are widely employed owing to their superior characteristics when compared to hard disk drives. However, NAND flash memory (NFM) still exhibits drawbacks, such as a limited lifetime and an erase-before-write requirement. Along with effective software management, the implementation of a cache buffer is one of the most common solutions to overcome these limitations. However, the read/write performance becomes saturated primarily because the eviction overhead. caused by limited DRAM capacity significantly impacts overall NFSD performance. This paper therefore proposes a method that hides the eviction overhead and overcomes the saturation of the read/write performance. The proposed method exploits the new intra-request idle time (IRIT) in NFSD and employs a new data management scheme. In addition, the new pre-store eviction scheme stores dirty page data in the cache to NFMs in advance. This reduces the eviction overhead by maintaining a sufficient number of clean pages in the cache. Further, the new pre-load insertion scheme improves the read performance by frequently loading data that needs to be read into the cache in advance. Unlike previous methods with large migration overhead, our scheme does not cause any eviction/insertion overhead because it actually exploits the IRIT to its advantage. We verified the effectiveness of our method, by integrating it into two cache management strategies which were then compared. Our proposed method reduced read latency by 43% in read-intensive traces, reduced write latency by 40% in write-intensive traces, and reduced read/write latency by 21% and 20%, respectively, on average compared to NFSD with a conventional write cache buffer. (C) 2017 Elsevier B.V. All rights reserved.
机译:由于与硬盘驱动器相比,基于NAND闪存的存储设备(NFSD)具有优越的特性,因此被广泛使用。但是,NAND闪存(NFM)仍然存在缺陷,例如寿命有限和写前擦除要求。与有效的软件管理一起,缓存缓冲区的实现是克服这些限制的最常见解决方案之一。但是,读/写性能变得饱和的主要原因是逐出开销。有限的DRAM容量造成的严重影响NFSD的整体性能。因此,本文提出了一种隐藏驱逐开销并克服读/写性能饱和的方法。所提出的方法利用了NFSD中新的请求内空闲时间(IRIT),并采用了新的数据管理方案。此外,新的存储前驱逐方案将缓存中的脏页数据提前存储到NFM。通过在缓存中保留足够数量的干净页面,可以减少逐出开销。此外,新的预加载插入方案通过频繁地将需要预先读取的数据频繁加载到缓存中来提高读取性能。与以前具有较大迁移开销的方法不同,我们的方案不会引起任何驱逐/插入开销,因为它实际上利用了IRIT的优势。通过将我们的方法集成到两个缓存管理策略中进行比较,我们验证了该方法的有效性。与传统的NFSD相比,我们提出的方法将读取密集型迹线的读取延迟平均减少了43%,将写入密集型迹线的写入延迟减少了40%,并将读/写延迟分别降低了21%和20%写入缓存缓冲区。 (C)2017 Elsevier B.V.保留所有权利。

著录项

  • 来源
    《Microprocessors and microsystems》 |2017年第5期|222-236|共15页
  • 作者单位

    Samsung Elect, Device Solut Div, Flash Design Team, Gyeonggi Do 445701, South Korea|Yonsei Univ, Dept Elect & Elect Engn, Elect & Elect Engn, Seoul 120749, South Korea;

    Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea;

    Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea;

    Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 151744, South Korea;

    Univ Calif Irvine, Dept Elect Engn & Comp Sci, Elect & Comp Engn Dept, Irvine, CA 92697 USA;

    Yonsei Univ, Sch Elect & Elect Engn, Dept Elect & Elect Engn, Seoul 120749, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Storage; Solid-state disk; NAND flash memory; Read/write cache; idle time;

    机译:存储;固态磁盘;NAND闪存;读/写缓存;空闲时间;

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