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Switch-level emulation of strength-base soft error detection

机译:基于强度的软错误检测的开关级仿真

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摘要

Modern nanometer circuits have become more prone to soft errors necessitating faster and more reliable error detection techniques. Simulation-based soft error detection has been popular but is limited by its inability to handle complex circuits and high run-time. FPGA-based soft error detection methods can be effectively used to overcome the speed limitation of simulation as well as handle circuits with much higher complexity. The paper presents a novel strength-based soft error emulation method targeting soft errors caused by transient pulses of magnitude less than logic threshold. The impact of transient injection location on soft error coverage is analyzed and the idea of using drain of a transistor as transient injection location is presented. Furthermore, the concept of transient equivalence is applied to minimize resource overhead as well as speed-up soft error detection process. Advanced switch-level models are designed using gate-level structure and used to implement switch-level equivalents of ISCAS'85 benchmarks. The experimental results reported for ISCAS'85 benchmarks show that an average soft error coverage of 0.7-0.8 was achieved using the proposed strength-based detection with drain as transient injection location. The application of transient equivalence resulted in speed-up of emulation by 2.875 and reduced the memory utilization by 65%. The emulation-based soft error detection achieved significant speed-up of the order of 106 as compared to a customized simulation-based method.
机译:现代的纳米电路更容易出现软错误,因此需要更快,更可靠的错误检测技术。基于仿真的软错误检测已广受欢迎,但由于无法处理复杂电路和运行时间长而受到限制。基于FPGA的软错误检测方法可以有效地克服仿真的速度限制,并以更高的复杂度处理电路。本文提出了一种新的基于强度的软错误仿真方法,该方法针对由幅度小于逻辑阈值的瞬态脉冲引起的软错误。分析了瞬态注入位置对软错误覆盖的影响,并提出了使用晶体管的漏极作为瞬态注入位置的想法。此外,瞬态等效的概念被应用以最小化资源开销以及加速软错误检测过程。先进的开关级模型使用门级结构设计,并用于实现ISCAS'85基准的开关级等效产品。为ISCAS'85基准测试报告的实验结果表明,使用建议的基于强度的检测(以排放为瞬时注入位置)可以实现0.7-0.8的平均软错误覆盖率。瞬态等效的应用使仿真速度提高了2.875,并将内存利用率降低了65%。与基于定制仿真的方法相比,基于仿真的软错误检测可显着提高106数量级的速度。

著录项

  • 来源
    《Microelectronics reliability》 |2011年第3期|p.692-702|共11页
  • 作者单位

    Ryerson University, 350 Victoria Street, Toronto, Canada M5B 2K3;

    Ryerson University, 350 Victoria Street, Toronto, Canada M5B 2K3;

    Ryerson University, 350 Victoria Street, Toronto, Canada M5B 2K3;

    Ryerson University, 350 Victoria Street, Toronto, Canada M5B 2K3;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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